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| BFS 481 NPN Silicon RF Transistor * For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA * fT = 8 GHz F = 1.4 dB at 900 MHz * Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFS 481 RFs Q62702-F1572 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 ... + 150 - 65 ... + 150 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg TS 83 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 380 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFS 481 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V Semiconductor Group 2 Dec-16-1996 BFS 481 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 6 8 0.24 0.11 0.35 - GHz pF 0.4 dB 1.45 1.8 - IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 2 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1) Gms 19 - IC = 5 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Power gain 2) Gma |S21e|2 15.5 10.5 14.5 - IC = 5 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 5 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-16-1996 BFS 481 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 200 mW Ptot 160 140 120 100 80 TS TA 60 40 20 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 RthJS K/W Ptotmax/P totDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Dec-16-1996 BFS 481 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.40 9 GHz pF 10V Ccb 0.30 fT 7 8V 6 0.25 5 0.20 4 0.15 3 2V 0.10 2 1 0 4 8 12 16 V VR 22 0 4 8 12 16 mA IC 24 1V 0.7V 3V 5V 0.05 0.00 0 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 22 dB 10V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 dB 5V 10V G 18 16 G 12 5V 3V 14 2V 12 10 3V 8 2V 6 10 1V 8 0.7V 6 4 0 5 10 15 mA 25 4 1V 2 0 0 5 10 15 mA 0.7V 25 IC IC Semiconductor Group 5 Dec-16-1996 BFS 481 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 22 VCE = Parameter, f = 900MHz 22 8V IC=5mA dB 0.9GHz dBm 18 5V 3V 2V G 18 16 14 12 1.8GHz 10 8 6 IP3 0.9GHz 1.8GHz 16 14 12 10 8 6 4 2 1V 4 2 0 0 2 4 6 8 V 12 0 -2 -4 0 2 4 6 8 10 12 14 V CE 16 mA 20 IC Power Gain Gma, Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) VCE = Parameter 22 IC=5mA dB IC=5mA dB G S21 20 18 16 14 12 15 10 10V 1V 0.7V 5 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 10V 2V 1V 0.7V 10 Semiconductor Group 6 Dec-16-1996 |
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